VS-20ETS08STRRPBF

Product Category: Power Semiconductor

Basic Information Overview: - Category: Power Schottky Diode - Use: Rectification and power supply applications - Characteristics: High efficiency, low forward voltage drop, fast switching speed - Package: TO-220AB - Essence: Efficient power rectification - Packaging/Quantity: Tape & Reel, 50 pieces per reel

Specifications: - Voltage Rating: 80V - Current Rating: 20A - Forward Voltage Drop: 0.65V at 10A - Reverse Leakage Current: 100µA at 80V - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration: - Pin 1: Anode - Pin 2: Cathode - Pin 3: Not connected (Tab)

Functional Features: - Fast switching speed for high-frequency applications - Low forward voltage drop for improved efficiency - High current capability for power handling

Advantages: - High efficiency in power rectification - Suitable for high-frequency applications - Low thermal resistance for better heat dissipation

Disadvantages: - Higher cost compared to standard diodes - Sensitive to reverse voltage spikes

Working Principles: The VS-20ETS08STRRPBF operates based on the Schottky barrier principle, where the metal-semiconductor junction provides low forward voltage drop and fast switching characteristics.

Detailed Application Field Plans: - Switching power supplies - DC-DC converters - Solar inverters - Motor drives - Uninterruptible power supplies (UPS)

Detailed and Complete Alternative Models: - 1. VS-30ETS08PBF - Voltage Rating: 80V - Current Rating: 30A - Package: TO-220AC - 2. VS-15ETS08PBF - Voltage Rating: 80V - Current Rating: 15A - Package: TO-263AB

This comprehensive entry provides a detailed overview of the VS-20ETS08STRRPBF, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.