VS-VSKE236/12PBF
Product Category: Power Semiconductor Module
Basic Information Overview: - Category: Power semiconductor module - Use: Used for power conversion and control in various electronic systems - Characteristics: High power handling capacity, high efficiency, compact design - Package: Encapsulated in a protective housing - Essence: Facilitates efficient power management in electronic systems - Packaging/Quantity: Typically sold individually or in small quantities
Specifications: - Voltage Rating: 1200V - Current Rating: 236A - Module Type: Dual IGBT - Mounting Style: Screw - Weight: 300g - Dimensions: 50mm x 100mm x 20mm
Detailed Pin Configuration: - Pin 1: Collector of IGBT 1 - Pin 2: Emitter of IGBT 1 - Pin 3: Gate of IGBT 1 - Pin 4: Collector of IGBT 2 - Pin 5: Emitter of IGBT 2 - Pin 6: Gate of IGBT 2 - Pin 7: Collector of Free-Wheeling Diode - Pin 8: Cathode of Free-Wheeling Diode - Pin 9: Anode of Free-Wheeling Diode
Functional Features: - Dual IGBT configuration for enhanced power handling - Integrated free-wheeling diode for improved efficiency - Screw mounting style for easy installation - High voltage and current ratings for versatile applications
Advantages and Disadvantages: - Advantages: - High power handling capacity - Compact design - Integrated free-wheeling diode - Disadvantages: - Higher cost compared to individual IGBT and diode components - Limited availability of alternative models
Working Principles: The VS-VSKE236/12PBF operates based on the principles of insulated gate bipolar transistor (IGBT) technology. When a suitable gate signal is applied, the IGBTs conduct current, allowing power to flow through the module. The integrated free-wheeling diode provides a path for the current when the IGBTs are turned off, reducing switching losses and improving overall efficiency.
Detailed Application Field Plans: - Industrial motor drives - Renewable energy systems - Uninterruptible power supplies (UPS) - Electric vehicle powertrains - Welding equipment
Detailed and Complete Alternative Models: - Alternative Model 1: VS-VSKD236/12PBF - Voltage Rating: 1200V - Current Rating: 236A - Module Type: Dual diode - Alternative Model 2: VS-VSKT236/12PBF - Voltage Rating: 1200V - Current Rating: 236A - Module Type: Dual thyristor
This comprehensive power semiconductor module, the VS-VSKE236/12PBF, offers high power handling capacity, efficient operation, and versatile application possibilities across various electronic systems.
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What is the VS-VSKE236/12PBF used for in technical solutions?
What are the key features of the VS-VSKE236/12PBF?
What is the maximum voltage and current rating of the VS-VSKE236/12PBF?
Can the VS-VSKE236/12PBF be used in parallel configurations?
What cooling methods are recommended for the VS-VSKE236/12PBF?
Does the VS-VSKE236/12PBF require any additional protection circuitry?
What are the typical applications of the VS-VSKE236/12PBF in technical solutions?
Is the VS-VSKE236/12PBF suitable for high-frequency switching applications?
What are the recommended mounting and assembly techniques for the VS-VSKE236/12PBF?
Are there any specific precautions to consider when integrating the VS-VSKE236/12PBF into technical solutions?