Diode/Bridge Rectifier

DC reverse withstand voltage (Vr): 300V Average rectified current (Io): 5A Forward voltage drop (Vf): 920mV@5A Reverse leakage current (Ir): 5uA, Forward surge current (IFSM): 110A

Silicon carbide SBD1200V5A

Silicon carbide SBD1200V5A

DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 3A Forward voltage drop (Vf): 850mV@3A Reverse current (Ir): 500uA@100V

VR=40V IO=3A VF=0.55V@3A

VR=40V IO=3A VF=0.55V@3A

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. Advanced geometries employ oxide passivation and epitaxial structures with metal-covered contacts. The Schottky diode is suitable for low voltage, high frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.