Diode/Bridge Rectifier

1000V, 3A, VF=1.2V@3A

The Schottky rectifier uses the Schottky barrier principle and uses a large area metal-silicon power diode. The advanced geometry of this Schottky rectifier utilizes oxide passivation and epitaxial structure of metal covered contacts. The rectifier is suitable for low-voltage high-frequency inverters, freewheeling diodes and polarity protection diodes.

The Schottky diode uses the Schottky diode barrier principle and uses a metal-silicon Power rectifier. It has an epitaxial structure with oxide passivation and metal-covered contacts. This is suitable for low-voltage high-frequency switching power supply, freewheeling diode and polarity protection diode.

60V,2A,VF=0.78V@2A

This Schottky rectifier uses the Schottky barrier principle and uses platinum barrier metal.

Diode configuration: Stand-alone DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 5A Forward voltage drop (Vf): 850mV@5A