Diode/Bridge Rectifier

This switching diode is suitable for high speed switching applications.

I(AV) 5 VRRM(V) 400 IFsM(A) 120 VFM(V) 1.25 VFMI(AV)(A) 5 IRM@VRRM(μA) 5 trr(ns) 35

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. This is suitable for low-voltage high-frequency inverters, freewheeling diodes and polarity protection diodes.