Diode/Bridge Rectifier

BR1508W-A1-0000

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.

Vrrm=600V, 1A, VF=1.1V@1A

VR/75V IR/0.001mA VF/1V IO/0.5A Trr/4ns

40V,1A,VF=0.55V@1A