Diode/Bridge Rectifier

400mW DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 300mA Forward voltage drop (Vf): 1.25V@150mA Reverse current (Ir): 1μA@75V Reverse recovery time (trr): 4ns @(Tj) 100V, 300mA, trr=4ns, VF=1.25V@150mA

Technical Documentation and Design Resources Silicon carbide simulation model?(4) Silicon carbide encapsulation drawing?(1) Silicon carbide datasheet?(1)

Schottky diode

30V, 200mA, VF=0.5V@200mA

30V, 200mA, VF=0.5V@200mA

30V,0.5A,[email protected]

DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 5A Forward voltage drop (Vf): 1.7V Reverse current (Ir): 5uA@1kV Reverse recovery time (trr): 35ns

100V, 10A, VF=0.85V@10A

Diode configuration: Standalone DC reverse withstand voltage (Vr): 20V Average rectified current (Io): 1A Forward voltage drop (Vf): 750mV@3A