Diode/Bridge Rectifier

Diode configuration: Standalone DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 2A Forward voltage drop (Vf): 950mV@2A

This Schottky diode uses the Schottky diode barrier principle and uses barrier metals to produce an optimized forward voltage drop-reverse current trade-off. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system. This encapsulation provides an alternative to the leadless 34 MELF style encapsulation.