Diode/Bridge Rectifier

DC reverse withstand voltage (Vr) 30 Average rectified current (Io) 200 Reverse current (Ir) 2 Inrush current before peak (IFsM) 0.6

DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 5A Forward voltage drop (Vf): 850mV@5A Reverse current (Ir): 500uA@100V

30V, 100mA, VF=0.37V@10mA

DC reverse withstand voltage (Vr): 800V Average rectified current (Io): 35A Forward voltage drop (Vf): [email protected] Reverse current (Ir): 5uA@800V Forward surge current (Ifsm): 370A Working temperature: -55℃~+150℃@(Tj)

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system. Due to its small size, it is suitable for portable and battery-operated products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC-DC and DC-DC converters, reverse battery protection and "OR" operation of multiple supply voltages, and any other application where performance and size are critical.

Technical documentation and design resources Simulation models?(4) encapsulation drawings?(1) Data sheets?(1)