Diode/Bridge Rectifier

Schottky, 2A 40V VF<0.55V SMA

Schottky, 2A 40V VF<0.55V SMA

DC reverse withstand voltage (Vr): 800V Average rectified current (Io): 2A Forward voltage drop (Vf): 1.1V@2A Reverse current (Ir): 5uA@800V Forward surge current (Ifsm): 60A Working temperature: -55℃~+150℃@(Tj)

ultra fast rectifiter, 1A 600V, Trr<35ns

Silicon carbide (SiC) Schottky diode uses a new technology that can provide excellent switching performance and has higher reliability than silicon. Silicon carbide's no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance make it a next-generation power semiconductor product. System benefits include highest energy efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

ES2KA-F1-0000HF

Diode configuration: stand-alone DC reverse withstand voltage (Vr): 1000V Average rectified current (Io): 3A Forward voltage drop (Vf): 1.1V@2A

Silicon carbideSBD650V4A

Silicon carbideSBD650V4A

Schottky diode Silicon carbide DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 2A Forward voltage drop (Vf): 850mV@2A Reverse current (Ir): 1uA@100V