Optocoupler/LED/nixie tube/photoelectric device

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0.5A output current, IGBT/MOSFET gate drive optocoupler

∮5plug-in850 infrared lamp ∮5plug-in850 emission tube size 5*8.7 current 40mATyp.1.45VTyp.850nm

Meihua Electronics LED SMD patch 0603 top light emitting, transparent colloid, super bright blue light, voltage VF: 2.7-3.3V, brightness Iv: 180-360mcd@20mA, dominant wavelength λd: 465-475nm, light angle: 120deg

0603 yellow light yellow yellow light SMD LED light-emitting diode highlight 1.6x0.8x0.8

0603 top-emitting white light with Zener 0.4T, SMD front-mounted LED, IF=25mA, low power consumption, good reliability, long life, strong anti-static ability

The FODM8071 is a 3.3V/5V high-speed logic gate output optocoupler that supports isolated communication, enabling digital signals to be communicated between systems without conducting ground loops or hazardous voltages. It utilizes ON Semiconductor's proprietary coplanar encapsulation technology Optoplanar and optimized IC design to achieve high noise immunity with high common-mode rejection specified characteristics. This high-speed logic gate output optocoupler encapsulation contains a high-speed AlGaAs LED at the input coupled with a CMOS sense IC at the output in a compact 5-pin low profile enclosure. The detection IC contains an integrated photodiode, a high-speed transimpedance amplifier, and a voltage comparator with output driver. This CMOS technology coupled with high efficiency LEDs enables low power consumption combined with very high speed (60ns propagation delay, 20ns pulse width distortion).

0805 ball head white (white: IV=160-240mcd,\n(Typ)@IF=5mA)

The FOD410, FOD4108, FOD4116, and FOD4118 devices consist of an infrared light-emitting diode coupled to a hybrid triac formed using two antiparallel SCRs to form a single triac capable of driving a discrete triac. Triac function. The FOD4116 and FOD4118 utilize a high-efficiency infrared light-emitting diode to provide enhanced trigger sensitivity. These devices use a standard 6-pin dual-inline plug-in (DIP) encapsulation.

Huawei verifies the materials. 0402 vertical cavity surface emitting laser; 1.0*0.5*0.4mm; infrared; wavelength: 940nm; working temperature: -40℃~+85℃; this product mainly converts electrical energy directly into near-infrared light (invisible light) and can radiate it Light-emitting devices are mainly used in various consumer electronics, sensors and wearable devices.