Optocoupler/LED/nixie tube/photoelectric device

Ceramic 3535 blue 430nm~440nm 1W~3W

LED Wide operating voltage: 1.8-2.3V Peak wavelength: 615nm-630nm Main wavelength: 622nm Dissipated power: 75mW

The FODM306X and FODM308X series consist of an IR LED optically coupled to a monolithic silicon detector, performing the function of a zero voltage dropout triac, in a compact 4-pin miniature flat encapsulation. Lead spacing is 2.54mm. They are used with triacs in logic systems to interface with 115/240 VAC line powered equipment such as solid state relays, industrial controllers, motors, electromagnetic devices, and consumer equipment.

The MOCD207M device consists of two Gallium Arsenide Infrared Emitting Diodes optically coupled to two monolithic silicon phototransistor detectors in a small surface mount plastic encapsulation. It is suitable for high-density applications without the need for through-board mounting.

5730 white light 5630 LED patch; 0.5W 4750K~5300K color tolerance is less than 5; copper bracket + gold wire.

4N38M, H11D1M, H11D3M, and MOC8204M are phototransistor type optocoupler opto-isolators. Gallium Arsenide Infrared Emitting Diodes are coupled to high voltage NPN silicon phototransistors. The device uses standard plastic six-pin dual-row plug-in encapsulation.

The FOD814 consists of two Gallium Arsenide infrared emitting diodes in a 4-pin dual-wire encapsulation, connected in anti-parallel, driving a silicon phototransistor output. The FOD817 series includes a Gallium Arsenide Infrared Emitting Diode driving a Silicon Phototransistor within a 4-pin 2-in-line encapsulation.

The 6N135M, 6N136M, HCPL4503M, HCPL2530M, and HCPL2531M optocouplers consist of an AlGaAs LED optically coupled to a high-speed phototransistor. A separate connection for photodiode biasing reduces the base-collector capacitance of the input transistor and is orders of magnitude faster than conventional phototransistors. The HCPL4503M has no internal connection to the phototransistor base, improving noise immunity. Internal interference shielding with excellent common-mode rejection up to 50,000 V/µs.