Power chip

The NCP51810 high-speed gate driver is designed to meet the stringent requirements of driving enhancement-mode (e?mode) and gate-inhibiting transistor (GIT) GaN HEMT power switches in offline, half-power supply topologies. The NCP51810 provides short-circuit and matched propagation delays for high-side drive, and a common-mode voltage range of −3.5 V to +200 V (typical). To fully protect the gates of the GaN power transistors from excessive voltage stress, both driver stages feature dedicated voltage regulators to accurately maintain the gate-source drive signal amplitude. The NCP51810 provides important protection features such as independent undervoltage lockout (UVLO) and IC thermal shutdown.

Input Voltage: 2.2V-5.5V OutputVoltage: 1.8V OutputCurrent: 0.6A Drop Voltage: 550MV Iq: 60uA Vfb: 1.8V Package: SOT23-3L

Dual Output LDO / Dual Output Regulator

Current Sense

Low dropout linear regulator output 5.0V Vd 0.5V

30V, 200mA

UCC24630 UCC24630 Synchronous Rectification Controller with Low Standby Power Consumption

Isolated power module: input range AC85~265V/DC100~370V, output 24V, 50W, isolation voltage greater than 2.5kVAC, standard size, industrial grade, standby power consumption as low as 0.15W, TA50 series module power efficiency up to 88%, DIP: 70*48*23mm

three-terminal voltage regulator

TPS3422 Single-Channel Push Button Controller with Configurable Delay and Reset Pulse

Vin=4.5V~30V