Triode/MOS tube/transistor/module

NPN, Vceo=80V, Ic=500mA, hfe=180-390

These N-channel power MOSFETs are produced using the innovative UltraFET process. This advanced process technology achieves the lowest on-resistance per unit of silicon area, resulting in outstanding performance. The device can withstand high energy in avalanche mode, and the diode has a very short reverse recovery time and very low stored charge. It is suitable for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products. Previously developed model TA75339.

NPN, Vceo=50V, Ic=150mA, hfe=200~400

Configuration Single Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 5.5 VGS(th)(v) 0.7 RDS(ON)(m?)@4.56V 26 Qg(nC)@4.5V 9.5 QgS(nC) 1.6 Qgd(nC) 3 Ciss(pF) 854 Coss(pF) 95 Crss(pF) 69

Type: P-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 4.2A Power (Pd): 1.2W On-resistance (RDS(on)@Vgs,Id): 49mΩ@10V, 4.2A

N-channel, 30V, 23A, 5.3mΩ@4.5V

N-channel, 60V, 4.8A, 50mΩ@10V