Triode/MOS tube/transistor/module

General materials (low voltage MOSFET power supply, energy storage power supply, etc.), Vds=100V Id=100A Rds=4.7mΩ (6.5mΩ maximum) DFN5x6encapsulation;

N-channel, 500V, 20A, 270mΩ@10V

Voltage VDSS650V, conduction resistance Rds1.3 ohms, charge Qg28nC, current ID8A

This N-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.

P channel

Semiconductor transistor field effect transistor MOS tube, TO-252, N channel, withstand voltage: 25V, current: 50A, 10V internal resistance (Max): 0.008Ω, 4.5V internal resistance (Max): 0.0095Ω, power: 50W

The MJE170/180 series are suitable for low power audio amplifier and low current high speed switching applications. MJE170, MJE171, MJE172 (PNP); MJE180, MJE181, MJE182 (NPN) are complementary devices.