Triode/MOS tube/transistor/module

Semiconductor transistor field effect transistor MOS tube, TO-263, P channel, withstand voltage: -60V, current: -90A, 10V internal resistance (Max): 0.0105Ω, 4.5V internal resistance (Max): 0.0125Ω, power: 140W

NPN

NPN, Vceo=25V, Ic=600mA, hfe=160~400

industrial grade

PNP, Vceo=-150V, Ic=-600mA, silk screen: 2L

60 V, 1 A NPN medium power transistor