Triode/MOS tube/transistor/module

Silicon carbide MOS1200V50mΩ

Type P VDSS(V) -50 ID@TC=68?C(A) -0.13 PD@TC=68?C(W) 0.2 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25?C VGS=4.48V -

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 80V Collector Current (Ic): 1A Power (Pd): 500mW DC Current Gain (hFE@Ic,Vce): 100@150mA, 2V BL 100-250 NPN ,Vceo=80V,Ic=1A,hfe=100~250

NPN

NPN, Vceo=65V, Ic=10mA

Configuration Single Type N-Ch VDS(V) 25 VGS(V) 12 ID(A)Max. 70 VGS(th)(v) 0.8 RDS(ON)(m?)@4.148V 2.5 Qg(nC)@4.5V 96 QgS(nC) 5.5 Qgd(nC) 16 Ciss(pF) 4920 Coss(pF) 510 Crss(pF) 350

UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.

NPN, Vceo=50V, Ic=2A, hfe=120~240