Triode/MOS tube/transistor/module

Ultra high voltage MOS tube

N+N channel, VDSS withstand voltage 20V, ID current 6A, RDON on-resistance 27mR@VGS 4.5V(MAX), VGS(th) turn-on voltage 0.5-1.2V

N-channel, 30V, 100A, 5.3mΩ@10V

N-channel, 60V, 100A, 5.6mΩ@10V

The MJ15003 and MJ15004 power transistors are suitable for high power audio, disk head positioners, and other linear applications.

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 60V Collector current (Ic): 1A Power (Pd): 1.5W Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE(sat )@Ic,Ib): 500mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 250@150mA, 2V Characteristic frequency (fT): 100MHz