Triode/MOS tube/transistor/module

NPN, Vceo=80V, Ic=1A, hfe=100~250, parameters are the same as other brands, cost-effective

2SA1611 TRANSISTOR (PNP) SOT323

NPN, Vceo=65V, Ic=100mA

P-channel, -30V, -17A, 8mΩ@-10V

N-Channel 400V 0.24A 1.5W

Transistor Type: NPN Collector Emitter Breakdown Voltage (Vceo): 300V Collector Current (Ic): 300mA Power (Pd): 350mW Collector Cutoff Current (Icbo): 250nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 200mV@20mA, 2mA DC current gain (hFE@Ic,Vce): 100@10mA, 10V Characteristic frequency (fT): 50MHz Operating temperature: +150℃@(Tj)

P-channel, -40V, -18.6A, 45mΩ@-10V