Triode/MOS tube/transistor/module

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N-channel, 150V, 43A, 42mΩ@10V

N-channel, 150V, 24A, 95mΩ@10V

Three-quadrant triac 25A/800V, plastic metal inner insulation encapsulation

Digital triode, including base current limiting resistor and pull-down resistor, can be directly used for 24V drive relay

N-channel, 60V, 45A, 25mΩ@10V

This family of digital transistors is suitable for replacing a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.

This N-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for use in switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.