Triode/MOS tube/transistor/module

N-channel, 30V, 4A, 50mΩ@10V

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.

SMD,4.72x3.75x1.05mm digital display -26+/-3DB rear sound

PNP, Vceo=-60V, Ic=-1A

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.

Semiconductor Transistor Field Effect Transistor MOS tube, SOT-23, N channel, withstand voltage: 20V, current: 5A, 10V internal resistance (Max): 4.5V internal resistance (Max): .035Ω, power: 1W