Triode/MOS tube/transistor/module

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.

600V/300mA unidirectional thyristor

N-channel, 20V, 7A, 26mΩ@10V

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 10A Power (Pd): 15W On-Resistance (RDS(on)@Vgs,Id): 131mΩ@10V,10A Threshold Voltage ( Vgs(th)@Id): 2.5V@250uA Operating temperature: -55 To 175℃@(Tj)

P-channel, -30V, -75A, 7mΩ@10V

60V 26A P-channel 30mΩ@10V

This NPN bipolar transistor is suitable for low voltage and high current applications. The device is housed in a SOT-223 encapsulation and is suitable for medium power surface mount applications.