Triode/MOS tube/transistor/module

The MBT3904DW1 and MBT3904DW2 devices are spin-offs of our popular SOT-23/SOT-323 three-lead devices. This dual NPN bipolar transistor is suitable for general purpose amplifier applications and comes in a SOT-363 six-lead surface mount encapsulation. By putting two discrete devices into one encapsulation, these devices are suitable for low-power surface-mount applications where board space is at a premium.

This PNP bipolar transistor is suitable for linear and switching applications. The device features TO-92 encapsulation and is suitable for medium power applications.

N-channel, 800V, 11A, 0.35Ω@10V

P channel-200V-5A 0.8

N-channel, 500V, 14A, 400mΩ@8.4A, 10V

Configuration Single Type P-Ch VDS(V) -20 VGS(V) 8 ID(A)Max. -3.8 VGS(th)(v) -0.5 RDS(ON)(m?)@4.83V 65 Qg(nC) @4.5V 10.1 QgS(nC) 1.21 Qgd(nC) 2.46 Ciss(pF) 677 Coss(pF) 82 Crss(pF) 73

Power MOSFET, 30 V, 7.0 A, Single N-Channel, TSOP-6