Triode/MOS tube/transistor/module

P-channel, -30V, -1.1A

Type N Drain-Source Voltage (Vdss) 100 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) 8.78 On-Resistance (mΩ) 13.5 Input Capacitance (Ciss) 1440 Reverse Transfer Capacitance Crss (pF) 30 Gate Charge (Qg ) 28

N channel

N channel

This N-channel MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.