Triode/MOS tube/transistor/module

N-type MOS tube@@VDS100V,ID45A,RDS(on),Typ@VGS=10V14mR

N-channel MOSFET, 30V, 53A, 9mΩ@10V

P channel 60V

This P-channel enhancement mode power MOSFET is produced using ON Semiconductor's planar stripe and DMOS proprietary technologies. This advanced MOSFET technology is especially suited for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.

YJQ50P03A-F1-1100HF

Type N Drain-Source Voltage (Vdss) 30 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) 6.3 On-Resistance (mΩ) 23 Input Capacitance (Ciss) 410 Reverse Transfer Capacitance Crss (pF) 40 Gate Charge (Qg ) 3.8