Triode/MOS tube/transistor/module

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PNP, Vceo=160V, Ic=1A

PNP, Vceo=50V, Ic=150mA

This N-Channel MV MOSFET is produced using ON Semiconductor's advanced Power Trench process which incorporates Shielded Gate technology. This process has been optimized to minimize on-resistance while maintaining excellent switching performance with the industry's best soft body diode.