Triode/MOS tube/transistor/module

N-channel, 650V, 21A, 120mΩ@18V

N+N channel, 20V, 7.6A, 13mΩ@4.5V

N-channel, 30V, 5.8A, 35mΩ@10V

Type: N-channel Drain-source voltage (Vdss): -30V Continuous drain current (Id): 3.5A Power (Pd): 278MW On-resistance (RDS(on)

N-channel, 500V, 7.2A, 850mΩ@10V

Semiconductor Transistor Field Effect Transistor MOS tube, TO-252, N channel, withstand voltage: 30V, current: 90A, 10V internal resistance (Max): 0.0085Ω, 4.5V internal resistance (Max): 0.013Ω, power: 85W

50V Tolerant Voltage, High Current Composite Transistor Array

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 65V Collector current (Ic): 100mA Power (Pd): 200mW 200~450 NPN, Vceo=65V, Ic=0.1A, silk screen 1B