Triode/MOS tube/transistor/module

Gallium Nitride GaN 650V Power Transistor(FET)

Gallium Nitride GaN 650V Power Transistor(FET)

This N-channel enhancement mode MOSFET is produced using a proprietary high cell density DMOS technology to minimize on-resistance while providing robust, reliable and fast switching performance. The BSS138 is especially suitable for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

This bipolar power transistor is suitable for general purpose amplifier and switching applications. The TIP3055 (NPN) and TIP2955 (PNP) are complementary devices.

Configuration Single Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 2 VGS(th)(v) 1.9 RDS(ON)(m?)@4.75V 240 Qg(nC)@4.5V - QgS(nC) 2.3 Qgd(nC) 1.1 Ciss(pF) 152 Coss(pF) 17 Crss(pF) 10

PNP, Vceo=-30V, Ic=-1A

PNP