Triode/MOS tube/transistor/module

Dual N-channel, 30V, 5.5A/6.3A

PNP, Vceo=-160V, Ic=-1A, hfe=100~200

PNP, Vceo=-40V, Ic=-600mA, hfe=30~300

P-channel, -30V, -7.6A, 50mΩ@-10V

Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 15A Power (Pd): 1.5W On-Resistance (RDS(on)@Vgs,Id): 8.5mΩ@10V,10A Threshold Voltage (Vgs(th)@Id): 1.5V@250μA Gate Charge (Qg@Vgs): [email protected]

NPN

Configuration Single Type N-Ch VDS(V) 20 VGS(V) 8 ID(A)Max. 6.3 VGS(th)(v) 0.7 RDS(ON)(m?)@4.27V 20 Qg(nC)@4.5V 8.5 QgS(nC) 1.56 Qgd(nC) 2.6 Ciss(pF) 574 Coss(pF) 67 Crss(pF) 60