Triode/MOS tube/transistor/module

Vceo base open circuit ≥ 400V: Ic safety current = 1.5A: Voltage between VBE base level and emitter level ≤ 1.2V: Hfe current amplification factor: 20-40 switching transistor.

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 40V Collector Current (Ic): 600mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 400mV@150mA, 15mA DC current gain (hFE@Ic,Vce): 100@150mA, 1V Characteristic frequency (fT): 250MHz Operating temperature: +150℃@(Tj)?

NPN