Triode/MOS tube/transistor/module

This PNP bipolar power transistor is suitable for line-operated audio output amplifiers, switch-mode power drivers, and other switching applications.

N-channel, 500V, 24A, 190mΩ@10V

N channel

30V N-Channel Low-Side NexFET Power MOSFET, Vgs is 20V 8-VSONP -55 to 150

Thyristor@@one-way thyristor ITRMS 0.8A withstand voltage 600V gate trigger current Igt=15~60(uA) pin KAG 100-8

N-channel, 200V, 9A, 0.21Ω@10V

Type: N-Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 4A Power (Pd): 1.56W On-Resistance (RDS(on)@Vgs,Id): 30mΩ@4.5V,4A Threshold Voltage (Vgs(th)@Id): 0.5V to 1.2V@250uA

Dual NPN array 40V 0.6A

This PNP bipolar transistor is suitable for general purpose amplifier applications. The device is housed in a SOT-223 encapsulation and is suitable for low power surface mount applications.

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 200mA Power (Pd): 150mW DC current gain (hFE@Ic,Vce): 100@10mA,1V 100~300 PNP 40V 0.2A