Triode/MOS tube/transistor/module

N-channel, 100V

NPN, Vceo=50V, Ic=3A, hfe=200~400

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.

P-channel, -20V, -4A, 42.5Ω@-4.5V

The combination of low saturation voltage and high gain makes this bipolar power transistor ideal for power-saving high-speed switching applications.