Triode/MOS tube/transistor/module

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance for industrial applications while maintaining excellent robustness and switching performance.

N-channel, 20V, 0.53A, 0.762Ω@1.5V

PNP, Vceo=-30V, Ic=-500mA, hfe=120~240

P-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 36.1A Power (Pd): 25W On-resistance (RDS(on)Max@Vgs,Id): 12mΩ@10V, 12A