Triode/MOS tube/transistor/module

N-channel, 30V, 3.3A, 60mΩ@10V

NPN, Vceo=50V, Ic=3A, hfe=100~200

This bipolar power transistor is suitable for general purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices.

30V 2.9mR＜

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Automotive power MOSFETs for compact and energy efficient designs with 3x3mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.

PNP, Vceo=-45V, Ic=-100mA, hFE:220~475

CSD19505KCS 80V, N-Channel NexFET™ Power MOSFET, CSD19505KCS