Triode/MOS tube/transistor/module

This N-channel MOSFET is designed to increase the overall efficiency and minimize the switching node noise of DC/DC converters, and can be used with synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), fast switching and body diode reverse recovery.

30V N-Channel NexFET Power Mosfet 8-VSON-CLIP -55 to 150

Type: N-channel Drain-source voltage (Vdss): 100V Continuous drain current (Id): 3A RDON on-resistance 105mR@VGS 10V(MAX), VGS(th) turn-on voltage 1-3V

P channel

PNP, Vceo=-200V, Ic=-0.3A

P-channel, -30V, -2.7A, 88mΩ@-10V

N-channel, 30V/50A, 11mΩ