Triode/MOS tube/transistor/module
These devices feature high current gain and low saturation voltage with up to 3 A of continuous collector current.
説明
Cmos (Guangdong Field Effect Semiconductor)
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BORN (Born Semiconductor)
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ransistors, NPN 70V 600mA 250mW HFE=100~300, SOT-23
説明
CJ (Jiangsu Changdian/Changjing)
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MOSFET Type N Drain-Source Voltage (Vdss) (V) 60 Threshold Voltage VGS ±20 Vth(V) 0.8-1.4 On-Resistance RDS(ON) (mΩ) 75/90 Continuous Drain Current ID (A) 3
説明
The NTMFS4C024N is a 30 V, 78 A, single N-channel power MOSFET.
説明
Prisemi (core guide)
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MICROCHIP (US Microchip)
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HXY MOSFET (Huaxuanyang Electronics)
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NPN Vceo=100V Ic=6A PC=2W
説明