Triode/MOS tube/transistor/module

P-channel, -20V, -5A, 35mΩ@-10V

Gallium Nitride GaN 650V Power Transistor(FET)

Gallium Nitride GaN 650V Power Transistor(FET)

N-channel, 60V, 120A, 0.002Ω@10V

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MOS tube type: N-channel Drain-source voltage (Vdss): 55V Continuous drain current (Id): 0.3A Power (Pd): 0.35W On-resistance (RDS(on)@Vgs,Id): 1.2mΩ@10V ,0.2A threshold voltage (Vgs(th)@Id): 0.8V-1.6V@250uA