Triode/MOS tube/transistor/module

P-channel, -200V, -3.6A, 1.5Ω@-10V

NPN

Field effect transistor (MOSFET) N-channel, VDSS withstand voltage 30V, ID current 5A, RDON on-resistance 42mR@VGS 10V(MAX), VGS(th) turn-on voltage 0.4-1.2V,

This N-channel MOSFET is designed for improving the overall energy efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It is ideal for use in small switching regulators, offering very low RDS(ON) and gate charge (QG) in a small encapsulation.

N-channel, Vce=1200V, Ic=25A

N-channel, Vce=1200V, Ic=15A

N-channel, Vce=1200V, Ic=40A

N-channel, Vce=650V, Ic=40A