Triode/MOS tube/transistor/module

This P-channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.

PNP Vceo=-30V Ic=-0.5A PC=0.625W

Configuration Single Type P-Ch VDS(V) -20 VGS(V) 12 ID(A)Max. -2.5 VGS(th)(v) -0.5 RDS(ON)(m?)@4.38V 140 Qg(nC) @4.5V 5 QgS(nC) 0.62 Qgd(nC) 1.15 Ciss(pF) 300 Coss(pF) 45 Crss(pF) 30

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing superior switching performance, dv/dt rate and higher avalanche energy. Therefore, the SuperFET II MOSFET easy-drive family offers slightly slower rise and fall times than the SuperFET II MOSFET family. This series is identified by an "E" part number suffix to help manage EMI issues and simplify design implementation. For faster switching applications where absolute minimum switching losses must be guaranteed, consider the Super-FET II MOSFET family.