Triode/MOS tube/transistor/module

PNP, Vceo=-300V, Ic=-200mA

NPN

N-channel, 800V, 17A, 290mΩ@10V

Semiconductor Transistor Field Effect Transistor MOS tube, TO-220, N channel, withstand voltage: 250V, current: 40A, 10V internal resistance (Max): 0.09Ω, power: 160W

N-channel 650V 4A

N-channel, 200V, 18A, 0.15ohm@Vgs=10V

DTA114EUA-F2-0000HF

NPN, Vceo=30V, Ic=1.5A