Triode/MOS tube/transistor/module

N-channel, 500V, 9A

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing superior switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power supply applications. The optimized body diode reverse recovery performance of SuperFET II FRFET MOSFETs can eliminate additional components and improve system reliability.

NPN, Vceo=50V, Ic=3A

Field effect configuration: P-channel VDSS withstand voltage -60V, ID current -14A, RDS(ON) on-resistance 55mR@VGS -10V(MAX), VGS(th) on-voltage -1.0V to -2.5V

PNP, Vceo=-45V, Ic=-100mA, hfe=200~600

One-way micro-trigger thyristor, 600V/4A, can replace 2P4M.

N-channel, 60V, 300mA, 2Ω@10V

The device includes two custom N-channel MOSFETs in a dual MLP encapsulation. The switch nodes are already interconnected for easy placement and routing of the synchronous buck converter. The control MOSFET (Q1) and synchronization SyncFET (Q2) provide the best power efficiency.