Triode/MOS tube/transistor/module

NPN,Vceo=40V,Ic=600mA

This N-channel enhancement mode field effect power transistor is produced using a high cell density DMOS proprietary process. This very high-density process is ideal for minimizing on-resistance. These devices are ideal for low-voltage applications such as notebook computers, cell phones, PCMICA cards, and other battery-powered circuits, where fast switching and low in-line power losses are required in a very small surface-mount encapsulation.

12V, N-Channel NexFET MOSFET™, Single LGA 0.8x1.5, 19mΩ 3-PICOSTAR -55 to 150

CSD19537Q3 CSD19537Q3, 100V N-Channel NexFET™ Power MOSFET

N-channel, 55V, 81A, 12mΩ@10V