Triode/MOS tube/transistor/module
ST (STMicroelectronics)
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ST (STMicroelectronics)
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SPTECH (Shenzhen Quality Super)
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Cmos (Guangdong Field Effect Semiconductor)
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N-channel, 30V, 161A, 4mΩ@4.5V
説明
DIODES (US and Taiwan)
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luxin-semi (Shanghai Luxin)
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VCES(V) 1200 IC(A)@124℃ 40 VCE(sat)(V) 1.75 E(off)(mj) 1.5 Vf(V) 1.2
説明
The FSB50550AT is an advanced power module for motion control based on Fast Recovery MOSFET (FRFET) technology and can be used as a compact inverter solution for low power motor drive applications such as fans and pumps. The FSB50550AT consists of six FRFET MOSFETs, three half-bridge gate driver HVICs with temperature sensing, and three bootstrap diodes in a compact encapsulation, fully isolated and optimized for thermal performance. The FSB50550AT has optimized switching speed and reduced parasitic inductance, resulting in low Electromagnetic Interference (EMI) characteristics. Since the FSB50550AT uses MOSFETs as the power switches, it offers greater robustness and a larger safe operating area (SOA) than IGBT-based power modules. The FSB50550AT solution is suitable for compact and reliable inverter designs where assembly space is limited.
説明
P-channel, 30V, 70A, 6.8mΩ@10V
説明
LYG (Lingyan Pavilion)
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NPN, Vceo=50V, Ic=150mA
説明
RealChip (Shenxin Semiconductor)
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