Triode/MOS tube/transistor/module

N-channel, 60V, 1.2A, 480mΩ@10V

Semiconductor Transistor Field Effect Transistor MOS tube, TO-252, N channel, withstand voltage: 40V, current: 50A, 10V internal resistance (Max): 0.0125Ω, power: 45W

Transistor type: 2 NPN Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 100mA Power (Pd): 200mW Collector cut-off current (Icbo): 15nA Collector-emitter saturation voltage (VCE( sat)@Ic,Ib): 300mV@100mA, 5mA Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)

PNP, Vceo=-60V, Ic=-2A, hfe=120~270

N channel