Triode/MOS tube/transistor/module

This N-channel MOSFET is produced using the advanced PowerTrench process incorporating shielded gate technology. This process is optimized for low on-resistance. This device is ideal for applications requiring ultra-low rDS(on) in a small space, such as high-performance VRM, POL, and Oring functions.

N-channel, 80V, 10A, 12.3mΩ@10V

Type: N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 300mA Power (Pd): 350mW On-resistance (RDS(on)@Vgs,Id): 2.2Ω@10V, 300mA

NPN,Vceo=40V,Ic=100mA

PNP, Vceo=305V, Ic=200mA