Triode/MOS tube/transistor/module
ElecSuper (Jingxin Micro)
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Polarity NPN Dissipated Power (W) 0.3 Maximum Collector Current (mA) 600 Collector- Base Voltage (V) 180 Saturation Voltage Drop (V) 0.15 Collector/ Base Current (mA) 44835 Maximum Working Frequency (MHz) 100
説明
CBI (Creation Foundation)
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TECH PUBLIC (Taizhou)
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This PNP bipolar transistor is suitable for general purpose amplifier applications. The device is housed in a SOT-223 encapsulation and is suitable for low power surface mount applications.
説明
CJ (Jiangsu Changdian/Changjing)
メーカー
ST (STMicroelectronics)
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CJ (Jiangsu Changdian/Changjing)
メーカー
P-channel, -20V, -2.3A, 112mΩ@-4.5V
説明
CJ (Jiangsu Changdian/Changjing)
メーカー