Triode/MOS tube/transistor/module

MOSFET Type P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.2 On-Resistance RDS(ON) (mΩ) 7/9 Continuous Drain Current ID (A) 40

100V/6.6A N-channel

Single N-channel, drain-source voltage (Vdss): 85V, continuous drain current (ld): 160A, RDS(on): 2.8mΩ

N-channel, 25V, 100A, 1mΩ@10V

Configuration Single Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 28 VGS(th)(v) 2 RDS(ON)(m?)@4.372V - Qg(nC)@4.5V 12 QgS(nC) 3 Qgd(nC) 3.2 Ciss(pF) 830 Coss(pF) 85 Crss(pF) 64