Triode/MOS tube/transistor/module

Semiconductor Transistor Field Effect Transistor MOS tube, TO-252, N channel, withstand voltage: 150V, current: 12A, 10V internal resistance (Max): 0.37Ω, power: 50W

Suitable for low voltage high speed switching applications in power supplies, converters, power motor control and bridge circuits.

This N-channel MOSFET is produced using the advanced PowerTrench process. Combining developments in both silicon and Dual Cool encapsulation technology, it offers the lowest rDS(on) due to extremely low junction-to-ambient thermal resistance while maintaining excellent switching performance.

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

Field Effect Transistor (MOSFET) Type: P-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 4.5A Power (Pd): 1.2W On-Resistance (RDS(on)@Vgs,Id): 41mΩ@10V, 4.1A Threshold voltage (Vgs(th)@Id): 1.5V@250uA Gate charge (Qg@Vgs): 6.8nC@10V Input capacitance (Ciss@Vds): 0.53nF@15V , Vds=30V Id=4.5A Rds=41mΩ, working temperature: -55℃~+150℃@(Tj);

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