Triode/MOS tube/transistor/module

Configuration Single Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 150 VGS(th)(v) 3 RDS(ON)(m?)@4.483V - Qg(nC)@4.5V 80 QgS(nC) 17 Qgd(nC) 21 Ciss(pF) 4950 Coss(pF) 530 Crss(pF) 321

This bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. MJD31, MJD31C (NPN) and MJD32, MJD32C (PNP) are complementary devices.

Low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.

NPN

N-channel, Vce=600V, Ic=60A, Vce(on)=1.85V

N-channel, 40V, 30A, 12.5mΩ@4.5V