Triode/MOS tube/transistor/module

The FJB5555 is a 1050 V 5 A NPN silicon epitaxial planar transistor. Suitable for high-speed switching applications, the FJB5555 features an industry-standard surface-mount TO-263 (D2PAK) encapsulation that provides design flexibility and excellent power dissipation performance.

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.